Drive circuit design of a phase change memory - Power Circuit - Circuit Diagram

Industrial Router Crystal 3.2×2.5mm 3225 26M (26.000MHz) 12PF 10PPM 20PPM 30PPM

MOS Power IC Full Range

Photocoupler

Introduction:

Phase-change memory (PC2RAM) represents a groundbreaking advancement in semiconductor memory technology. As the race intensifies to develop next-generation high-performance non-volatile memory solutions, PC2RAM stands out due to its numerous advantages. It excels in read/write speed, data retention, cell size, and power efficiency, showcasing immense competitive potential and rapid progress. Phase-change memory achieves data storage by leveraging the distinct resistive states of nanoscale phase-change materials in their crystalline and amorphous forms. Read and write operations are executed by applying voltage or current pulses to the memory cells. These cells are highly sensitive to the driving voltages or currents produced by the driving circuits. Consequently, designing a high-performance driving circuit has become critical to realizing the functionality of these chips. This paper presents a novel approach to designing a simplified phase-change memory drive circuit. The circuit employs a current-driven method, incorporating a reference voltage circuit, bias current circuit, current mirror circuit, and control circuit.

1. Circuit Design and Analysis:

1.1 Phase-change Memory Chip:

The internal structure of a phase-change memory typically includes several key components. These include a phase-change memory cell array (1R1T array), row and column decoders (RowDec and ColumnDec), a read/write driver circuit (DRV8), a drive control circuit (DRVCon), and a sense amplifier circuit (SA8).