Semiconductor lighting rare earth zincate red fluorescent material and preparation method thereof

Abstract: The invention discloses a semiconductor illumination rare earth zincate red fluorescent material and a preparation method thereof. A rare earth red fluorescent material for LEDs of (M1)↓[x](M↓[2])↓[y]RE↓[z]ZnO↓[2], wherein M1 is selected from the group consisting of lithium, sodium, potassium, M2 It is selected from the group consisting of magnesium, calcium, strontium and barium, x=0 to 0.3, y=0.01 to 1, z=0 to 0.1x+y+z=1, and RE is Eu, Dy, Pr, Sm and the like. The preparation condition of the invention is mild, and has strong absorption at 200-400 nm. On the one hand, it can block the ultraviolet light leakage of the LED, on the Other hand, the energy efficiency can be improved, and a strong excitation peak is obtained at 400-420 nm, and the main peak is at 413 nm. The emission peak is 600-620nm, the main peak is at 610nm, the luminescence intensity is good, the color purity is good, and the photothermal stability is high, which meets the requirements of LED phosphors, and has great advantages in LED lighting materials. Potential application value.

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